| PART |
Description |
Maker |
| MRF141 |
RF Power FET 150W, to 175MHz, 28V
|
M/A-COM Technology Solutions, Inc.
|
| D1003UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(60W-28V-175MHz,Single Ended)(镀金多用DMOS射频硅场效应60W-28V-175MHz,单端))
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| D1006UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(120W-28V-175MHz,Single Ended)(镀金多用DMOS射频硅场效应120W-28V-175MHz,单端))
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| MRF141G |
RF Power FET 300W, 175MHz, 28V
|
M/A-COM Technology Solutions, Inc.
|
| RD06HVF108 |
RF POWER MOS FET Silicon MOSFET Power Transistor 175MHz,6W
|
Mitsubishi Electric Semiconductor
|
| D1001UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(20W-28V-175MHz,Single Ended)(镀金多用DMOS射频硅场效应20W-28V-175MHz,单端))
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W - 28V - 175MHz SINGLE ENDED
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| MTP10N60E7 ON2541 MTP10N60E7-D |
TMOS 7 E-FET™ High Energy Power FET
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
| MTB10N60E7 ON2391 MTB10N60E7-D MTB10N60E7T4 |
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS 7 E-FET™ High Energy Power FET
From old datasheet system
TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
| M57706 57706 |
145-175MHz 12.5V /8W /FM MOBILE RADIO
145-175MHz 12.5V,8W,FM MOBILE RADIO
145-175MHz 12.5V8WFM MOBILE RADIO
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| RD07MVS1-101 RD07MVS1-T112 RD07MVS1 |
Silicon MOSFET Power Transistor,175MHz,520MHz,7W
|
Mitsubishi Electric Semiconductor
|
